MF-SIM-001 (AND gate) report structure
Hypothesis: Dual-input AND gate produces output O only when both I1 and I2 exceed threshold concentration.
Model setup: Dual toehold architecture, blocking strand protecting output domain, leak pathway modeled.
Control conditions: no input, I1 only, I2 only, I1 + I2.
R_correct = k_{I1,I2}
R_leak = k_spurious
R_correct >> R_leakObserved results: [INSERT ACTUAL OUTPUT CONCENTRATION DATA]. Quantitative metrics: leak probability [INSERT VALUE OR RANGE], convergence time [INSERT TIME RANGE], output dominance ratio [INSERT RATIO].
Boundary condition: leak amplification increases as cascade depth rises beyond modeled threshold.
Figure 03 - Strand Displacement AND Gate
Representative gate topology used for Phase I validation.